2SA1312 PNP transistors（BJT） -120V -100mA/-0.1A 100MHz 200~400 -300mV/-0.3V SOT-23/SC-59 marking ABG radio RF amplifier|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

2SA1312 PNP transistors（BJT） -120V -100mA/-0.1A 100MHz 200~400 -300mV/-0.3V SOT-23/SC-59 marking ABG radio RF amplifier

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Model：2SA1312
Manufacturer：HUABAN
Date Code：05+ 07+
Standard Package：3000
Min Order：10
Mark/silk print/code/type：ABL
Package：SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-120V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	-120V
集电极连续输出电流IC Collector Current(IC)	−100mA/-0.1A
截止频率fT Transtion Frequency(fT)	100MHz
直流电流增益hFE DC Current Gain(hFE)	350~700
管压降VCE（sat） Collector-Emitter SaturationVoltage	-300mV/-0.3V
耗散功率Pc PoWer Dissipation	150mW/0.15W
Description & Applications	silicon PNP epitaxial type audio frequency low noise amplifier application； high voltage； low noise； high hFE
描述与应用	硅PNP外延型音频高频低噪声放大器的应用; 高电压; 噪音低; HFE高

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