集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC
Collector Current(IC) | −150mA/-0.15A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 270~560 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率Pc
PoWer Dissipation | 200mW/0.2W |
| Description & Applications | For low frequency amplify application silicon PNP epitaxial type small collector to emitter saturation voltage； excellent linearity DC forward gain； for hybird IC，small type machine low frequency voltage amplify application |
| 描述与应用 | 对于低频放大应用 硅PNP外延型 小集电极到发射极饱和电压; 出色的线性直流正向增益; 摄录IC，小型机低频电压放大应用 |