集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
40V |
集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
截止频率fT
Transtion Frequency(fT) |
450MHz |
直流电流增益hFE
DC Current Gain(hFE) |
90~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
170mV/0.17V |
耗散功率Pc
Power Dissipation |
125mW/0.125W |
| Description & Applications |
Features •Silicon NPN epitaxial planar type •For high-speed switching •Low collector-emitter saturation voltage VCE(sat) •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
特点 •NPN硅外延平面型 •对于高速切换 •低集电极 - 发射极饱和电压VCE（sat） •SS-迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |