集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 65mA |
截止频率fT
Transtion Frequency(fT) | 8.5Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~300 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •For 2GHz band low-noise amplification •High transition frequency fT. •S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | 特点 •NPN硅外延平面型•2GHz频段低噪声放大 •高转换频率fT。 •S-迷你型包装，使瘦身的设备和通过自动插入带包装盒包装 |