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  • Model：2SK1958
  • Manufacturer：HUABAN
  • Date Code：05 05+NOPB200
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：G21
  • Package：SOT-323/SC-70

最大源漏极电压Vds Drain-Source Voltage16V
最大栅源极电压Vgs(±) Gate-Source Voltage7V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance5Ω/Ohm @10mA,4V
开启电压Vgs（th） Gate-Source Threshold Voltage0.5-1.1V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. Features MOS FIELD EFFECT TRANSISTOR Gate can be driven by 1.5 V Because of its high input impedance, there’s no need to consider drive current Since bias resistance can be omitted, the number of components required can be reduced
描述与应用MOS场效应晶体管 N沟道MOS FET高速开关 2SK1958是一个N沟道垂直MOS FET。因为 它可以由一个电压驱动低至1.5 V，这是不 必要考虑驱动电流，这FET是理想的作为 执行器的低电流的便携式系统，如耳机 音响和摄像机。 特性 MOS场效应晶体管 栅极可以由1.5 V驱动 由于其高输入阻抗就没有必要考虑驱动电流 由于偏置电阻可以省略，可以减少所需的部件数量

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2SK1958
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