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  • Model：AO6800
  • Manufacturer：HUABAN
  • Date Code：06NOPB 05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：hovd
  • Package：SOT-163/SOT23-6/TSOP6

最大源漏极电压Vds
Drain-Source Voltage		30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		3.4A
源漏极导通电阻Rds
Drain-Source On-State Resistance		88mΩ@ VGS = 2.5V,ID =2A
开启电压Vgs（th）
Gate-Source Threshold Voltage		0.6~1.4V
耗散功率Pd
Power Dissipation		1.15W
Description & ApplicationsDual N-Channel Enhancement Mode Field Effect Transistor General Description The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications
描述与应用双N沟道增强型场效应晶体管 概述 AO6800采用先进沟道技术，提供优良的RDS（ON），低栅极电荷和操作与栅极电压低至2.5V。这个装置是适合用于作为负载开关或PWM应用

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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AO6800
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