| 最大源漏极电压Vds Drain-Source Voltage |
6V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
±6V |
| 最大漏极电流Id Drain Current |
25MA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
0.2V~0.8V @VDS = 5 V, VG2S = 4 V ID = 100 μA |
| 耗散功率Pd Power Dissipation |
150MW |
| Description & Applications |
* Built in Biasing Circuit MOS FET IC . * UHF RF Amplifier. * Built in Biasing Circuit; To reduce using parts cost & PC board space. * Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) * Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. |
| 描述与应用 |
* 内置偏置电路MOS FET的IC。 * UHF射频放大器。 * 内置偏置电路降低零部件的成本与PC板空间。 * 低噪音特点;（NF= 2.0 dB（典型值）。在f =900兆赫） * 耐ESD;内置ESD吸收二极管。承受高达200V在C = 200pF，Rs = 0条件。 |