集电极-基极反向击穿电压V(BR)CBO 
            Collector-Base Voltage(VCBO) | 
            −50V | 
        
        
            集电极-发射极反向击穿电压V(BR)CEO 
            Collector-Emitter Voltage(VCEO) | 
            −45V | 
        
        
            集电极连续输出电流IC 
            Collector Current(IC) | 
            −500mA/-0.5A | 
        
        
            截止频率fT 
            Transtion Frequency(fT) | 
            100MHz | 
        
        
            直流电流增益hFE 
            DC Current Gain(hFE) | 
            160~400 | 
        
        
            管压降VCE(sat) 
            Collector-Emitter SaturationVoltage | 
            −700mV/-0.7V | 
        
        
            耗散功率Pc 
            PoWer Dissipation | 
            300mW/0.3W | 
        
        
            | Description & Applications | 
            PNP Silicon Transistor                                                                                                                                         Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | 
        
        
            | 描述与应用 | 
            PNP硅晶体管                                                                                                                                                      特点 •这些器件是无铅,无卤素/ 无BFR,并符合RoHS |