| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-45V/45V |
| 集电极连续输出电流IC Collector Current(IC) |
-100mA/100mA |
| 截止频率fT Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
200~475 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
600mV |
| 耗散功率Pc Power Dissipation |
380mW |
| Description & Applications |
Features •Dual General Purpose Transistors •Pb−Free Package is Available |
| 描述与应用 |
特点 •双通用晶体管 •无铅包装是可用 |