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BCR22PN NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA HEF=50 R1=R2=22KΩ 250mW/0.25W SOT-363/SC-88/SC70-6 marking WP switching inverting interface driver circuit
Inventory:0
Min Order:10
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Parameters:
Model:BCR22PN
Manufacturer:HUABAN
Date Code:07nopb 05+
Standard Package:3000
Min Order:10
Mark/silk print/code/type:WP
Package:SOT-363/SC-88/SC70-6
Q1 Collector-Base Voltage(VCBO)
50V
Q1Collector-Emitter Voltage(VCEO)
50V
Q1 Collector Current(IC)
100MA/0.1A
Q2 Collector-Base Voltage(VCBO)
-50V
Q2Collector-Emitter Voltage(VCEO)
-50V
Q2Collector Current(IC)
-100MA/-0.1A
Q1 Input Resistance(R1)
22KΩ
Q1Base-Emitter Resistance(R2)
22KΩ
Q1(R1/R2) Q1 Resistance Ratio
1
Q2 Input Resistance(R1)
22KΩ
Q2Base-Emitter Resistance(R2)
22KΩ
Q2(R1/R2) Q2 Resistance Ratio
1
DC Current Gain(hFE) Q1/Q2
50/50
Transtion Frequency(fT) Q1/Q2
130MHZ/130MHZ
Power Dissipation
250MW/0.25W
Description & Applications
NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=22k, R2=22k)
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Instruction
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