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  • Model：BF1205
  • Manufacturer：HUABAN
  • Date Code：0652/07+ROHS 06+ROHS
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：L4
  • Package：SOT-363/SC70-6

最大源漏极电压Vds
Drain-Source Voltage		10V
最大栅源极电压Vgs(±)
Gate-Source Voltage		6~10V/6~10V
最大漏极电流Id
Drain Current		30mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
开启电压Vgs（th）
Gate-Source Threshold Voltage		0.3~1V
耗散功率Pd
Power Dissipation		200mW/0.2W
Description & ApplicationsDual N-channel dual gate MOS-FET FEATURES Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch reduces the number of external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment.
描述与应用双N沟道双栅MOS-FET 特点 两个低噪声增益控制放大器，在单个封装中。与一个完全集成的偏置和部分集成的偏置 内部开关减少了外部元件数量 高级交叉调制性能在AGC 高正向转移导纳 高正向转移导纳输入电容比。 应用 增益控制的低噪声放大器，VHF和UHF应用与5 V电源电压，如数字和模拟电视调谐器和专业的通信设备。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BF1205
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