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  • Model：BF904
  • Manufacturer：HUABAN
  • Date Code：06+ROHS 06NOPB
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：M04
  • Package：SOT-143

最大源漏极电压Vds Drain-Source Voltage7V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs（th） Gate-Source Threshold Voltage0.3~1.2V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsN-channel dual gate MOS-FETs VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source.
描述与应用N沟道双栅MOS场效应管 VHF和UHF的应用3到7 V电源电压 诸如电视调谐器和专业的通信设备 特点 •专为使用5 V电源电压 •短沟道晶体管的输入电容比具有高传输导纳 •低噪声增益控制放大器高达1 GHz •高级交叉调制性能在AGC。 应用 •VHF和UHF具有3至7 V电源电压，例如电视调谐器和专业的通信设备的应用程序。 说明 增强型场效应晶体管在一个塑料的超小型的SOT143B SOT143R包。该晶体管包括一个放大器的MOS-FET的源。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BF904
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