集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 1.45GHz |
直流电流增益hFE
DC Current Gain(hFE) | 25 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc
Power Dissipation | 350mW/0.35W |
| Description & Applications | NPN SILICON RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,designed for low noise, high frequency amplifier and high output oscillator applications. |
| 描述与应用 | NPN硅RF晶体管 中央的半导体CMPT5179类型是NPN硅RF晶体管 由外延平面工艺制造，环氧树脂成型的表面贴装封装，专为低噪音，高频率放大器和高输出振荡器 的应用程序。 |