最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -12V |
最大漏极电流Id
Drain Current | -2.2A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 220mΩ@ VGS = -2.5V, ID = -1.9A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.45~-1.2V |
耗散功率Pd
Power Dissipation | 960mW/0.96W |
| Description & Applications | Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge |
| 描述与应用 | 超低导通电阻 双P沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷 |