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  • Model：MMFT960T1
  • Manufacturer：HUABAN
  • Date Code：03+
  • Standard Package：1000
  • Min Order：10
  • Mark/silk print/code/type：FT960
  • Package：SOT-223/SC-73/TO261-4

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage30V
最大漏极电流Id Drain Current300mA/0.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1.7Ω/Ohm @1A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage1.0-3.5V
耗散功率Pd Power Dissipation800mW/0.8W
Description & ApplicationsPower MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. •Silicon Gate for Fast Switching Speeds •Low Drive Requirement •The SOT−223 Package can be Soldered Using Wave or Reflow •The Formed Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die •Pb−Free Package is Available
描述与应用•硅栅快速开关速度 •低驱动要求 •SOT-223包装可以使用波或回流焊接 所形成的线索在焊接热应力吸收 消除模具损坏的可能性 •无铅包装是可用

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MMFT960T1
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