PMBFJ176 JFET P-Channel 30 V －2.0~－35.0mA SOT-23 marking W6S|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

PMBFJ176 JFET P-Channel 30 V －2.0~－35.0mA SOT-23 marking W6S

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Model：PMBFJ176
Manufacturer：HUABAN
Date Code：0622+ROHS
Standard Package：3000
Min Order：10
Mark/silk print/code/type：W6S
Package：SOT-23/SC59

最大源漏极电压Vds Drain-Source Voltage	30 V
栅源极击穿电压V(BR)GS Gate-Source Voltage	30 V
漏极电流(Vgs=0V)IDSS Drain Current	－2.0~－35.0mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	1.0~4.0V
耗散功率Pd Power Dissipation	300mW/0.3W
Description & Applications	PMBFJ176 P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.
描述与应用	PMBFJ176 P-沟道硅场效应晶体管说明硅对称p沟道结场效应晶体管的塑料超小型SOT23封装。他们的目的是为应用模拟开关，换向器等采用SMD技术。比较特别的是漏极和源极连接的互换性。

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PMBT2369 NPN Transistors(BJT) 40V 200mA/0.2A 500MHz 120 250mV/0.25V SOT-23/SC-59 marking 1J switch	PMBT2369 Mark：W1J Package：SOT-23/SC-59	HUABAN	Lot number：05+nopb 06+	2700 10Minimum
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PMBT3904 NPN Transistors(BJT) 60V 100mA/0.1A 300MHz 300 200mV/0.2V SOT-23/SC-59 marking 1A switch	PMBT3904 Mark：1A Package：SOT-23/SC-59	HUABAN	Lot number：06+nopb	3000 10Minimum
PMBT3906 PNP transistors（BJT） -40V -100mA/-0.1A 250MHz 100~300 -200mV/-0.2V SOT-23/SC-59 marking 2A switch	PMBT3906 Mark：2A/W2A Package：SOT-23/SC-59	HUABAN	Lot number：05+15rnopb 05+	66000 10Minimum

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