集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 300V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 300V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 50MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 360mW/0.36W |
| Description & Applications | Features • NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA92 (PNP) |
| 描述与应用 | 特点 •NPN硅晶体管高电压 •高击穿电压 •低集电极 - 发射极饱和电压 •互补类型：SMBTA92（PNP） |