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  • Model：SSM6N03FE
  • Manufacturer：HUABAN
  • Date Code：05+ 05+
  • Standard Package：4000
  • Min Order：10
  • Mark/silk print/code/type：DA
  • Package：SOT-563/ES6

最大源漏极电压Vds
Drain-Source Voltage		20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		10V
最大漏极电流Id
Drain Current		100mA/0.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance		1200mΩ@ VGS = 2.5V, ID = 10mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		0.7~1.3V
耗散功率Pd
Power Dissipation		150mW/0.15W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications ● Input impedance is high. Driving current is extremely low. ● Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. ● High-speed switching. ● Housed in a ultra-small package which is suitable for high density mounting.
描述与应用东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 模拟开关应用 ●输入阻抗高。驱动电流极低。 ●可直接驱动CMOS器件即使在低电压低栅极阈值电压。 ●高速开关。 ●坐落在一个超小型封装，适用于高密度 安装。

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