| TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.)
High forward transfer admittance : |Yfs| = 7 S (typ.)
Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
zEnhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)
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