| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 耗散功率Pc Power Dissipation | 0.1W/100mW |
| Description & Applications | Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •Costs can be reduced through downsizing of the equipment and reduction of the number of parts. •Mounting ratio: 99.9% to 100% •10 000 pcs per 1 reel, reducing reel change frequency. |
| 描述与应用 | 特点 •内置电阻晶体管 •硅PNP外延刨床晶体管 •成本可降低通过裁员的设备和零件的数量减少。 •安装比例：99.9％至100％ •10000个每1卷轴，减少换卷频率 |