最大源漏极电压Vds
Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V |
最大漏极电流Id
Drain Current | 700mA/0.7A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 385mΩ@ VGS = 4.5V, ID = 660mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.6~1.5V |
耗散功率Pd
Power Dissipation | 300mW/0.3W |
| Description & Applications | Dual N-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFETS: 2.5 V Rated |
| 描述与应用 | 双N沟道20-V（D-S）的MOSFET 特点 •TrenchFET®功率MOSFET：2.5 V额定 |