集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
50mA |
截止频率fT
Transtion Frequency(fT) |
250MHz |
直流电流增益hFE
DC Current Gain(hFE) |
250~500 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
60mV |
耗散功率Pc
Power Dissipation |
125mW/0.125W |
| Description & Applications |
Features •Silicon PNP epitaxial planer type •For high-frequency amplification Complementary to 2SA1791J •High transition frequency fT. •Small collector output capacitance Cob •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 |
特点 •PNP硅外延平面型 •对于高频放大互补 2SA1791J •高转换频率fT。 •小集电极输出电容芯 •SS-迷你型包装，让瘦身的设备通过自动插入带包装盒包装。 |