| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流IC Collector Current(IC) | -300mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 35MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 140~450 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | -400mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 1100mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type • High breakdown voltage: VCEO = −400 V • High-Voltage Switching Applications |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •东芝晶体管的硅NPN三重扩散台面型 •高击穿电压：VCEO=-400V •高电压开关应用 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |