| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V/-15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V/-10V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/-500mA |
| 截止频率fT Transtion Frequency(fT) |
150MHz/130MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
160~460/100~350 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
100mV/-160mV |
| 耗散功率Pc Power Dissipation |
300mW |
| Description & Applications |
Features • Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification (Tr1) • For amplification of low frequency output (Tr2) 2SD601A+2SB970 |
| 描述与应用 |
特点 •NPN硅外延的刨床晶体管（TR1）硅PNP外延刨床晶体管的（TR2） •两个要素纳入一包装。 •减少安装面积和汇编一半的费用。 应用 •对于一般的放大（TR1） •放大低频输出（TR2）2SD601A+2SB970 |