最大源漏极电压Vds
Drain-Source Voltage | 20v |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -20v |
漏极电流(Vgs=0V)IDSS
Drain Current | 0.21~0.35ma |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -0.37~-1v |
耗散功率Pd
Power Dissipation | 100mW/0.1W |
| Description & Applications | •Silicon N-Channel Junction FET •High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) t = 0.3 mm TYP. |
| 描述与应用 | •硅N沟道结型场效应管 •高增益 -0.5分贝（VDS=2.0 V，C =5 pF的，RL=2.2kΩ的） •低噪音 -109分贝（VDS=2.0 V，C =5 pF的，RL=2.2kΩ上） T =0.3毫米TYP。 |