集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 180V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 160V |
集电极连续输出电流IC
Collector Current(IC) | 600mA/0.6A |
截止频率fT
Transtion Frequency(fT) | 100~400MHz |
直流电流增益hFE
DC Current Gain(hFE) | 80~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 625mW/0.625W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage • Low collector saturation voltage • Complementary to 2N5401 |
| 描述与应用 | NPN平面外延硅晶体管 简述 •通用放大器 •高电压施加 特点 •高集电极击穿电压 •低集电极饱和电压 •互补型2N5401 |