| Collector-Base Voltage(VCBO) Q1/Q2 |
-50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 |
-50V/50V |
| Collector Current(IC) Q1/Q2 |
-100mA/100mA |
| Input Resistance(R1) |
10KΩ/Ohm |
| Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| (R1/R2) Q1 Resistance Ratio |
1 |
| Input Resistance(R1) |
10KΩ/Ohm |
| Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| (R1/R2) Q2 Resistance Ratio |
1 |
| DC Current Gain(hFE) |
60 |
| Transtion Frequency(fT) |
|
| Power Dissipation |
500mW/0.5W |
| Description & Applications |
Features •Dual Common Base−Collector Bias Resistor Transistors •NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •These are Pb−Free Devices |
| 描述与应用 |
特点 •双共基极 - 集电极偏置电阻晶体管 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计吗？ •缩小板级空间 •减少元件数量 •这些都是Pb-Free设备 |