集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −45V |
集电极连续输出电流IC
Collector Current(IC) | −500mA/-0.5A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~600 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −620mV/-0.62V |
耗散功率Pc
PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP small signal transistor FEATURES 1) High gain and low saturation voltage. 2) Ideal for small load switching applications. 3) Complements the BCX19. |
| 描述与应用 | PNP小信号晶体管 特点 1）高增益，低饱和电压。 2）非常适于小型负载开关应用。 3）补充BCX19 |