集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | −200mA/-0.2A |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -400mV/-0.4V |
耗散功率Pc
PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor General Purpose Transistor Features • Pb−Free Packages are Available |
| 描述与应用 | PNP外延平面晶体管 通用晶体管 特点 •无铅包可用 |