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  • Model：FDN359AN
  • Manufacturer：HUABAN
  • Date Code：05+ 05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：359
  • Package：SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current2.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.046Ω/Ohm @2.7A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage1-3V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsN-Channel Logic Level PowerTrench TM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain uperior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V RDS(ON) = 0.060 W @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.
描述与应用N沟道逻辑电平的PowerTrench TM MOSFET 概述 这N沟道逻辑电平MOSFET产生 采用飞兆半导体先进的 PowerTrench进程，已特别定制 尽量减少对通态电阻，但维持优越的开关性能。 这些器件非常适用于低电压，电池供电应用中低线的功率 损耗和快速开关是必需的。 开关速度非常快。 低栅极电荷（典5NC） 高功率版本的行业标包相同的引脚SOT-23高出30％ 功率处理能力

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