最大源漏极电压Vds
Drain-Source Voltage | 15v |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -15v |
漏极电流(Vgs=0V)IDSS
Drain Current | 10~17ma |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -0.2~-1.4v |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | N-channel junction silicon FET High-Frequency Low=noise Amp Applications Applications AM tuner RF amp, low-noise amp Features Adoption of FBET process Very low noise figure Very small-sized package permitting 2SK932-applied sets to be made smaller and slimmer |
| 描述与应用 | N沟道结硅FET 高频 低噪声放大器应用 应用 AM调谐器RF放大器，低噪声放大器 特点 采纳FBET过程 非常低的噪声系数 非常小的封装允许2SK932应用设置更小和更薄 |