集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
截止频率fT
Transtion Frequency(fT) |
80MHz |
直流电流增益hFE
DC Current Gain(hFE) |
350~700 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
250mV/0.25V |
耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
NPN Silicon epitaxial Transistors. Audio frequency general purpose amplifier applications . Features: High voltage and high current, Excellent hFE linearity, High hFE, Low noise, Small package, Complementary to 2SA1162. |
| 描述与应用 |
NPN硅外延晶体管, 音频通用放大器. 特点: 高电压和高电流, 优秀HFE线性, 高HFE, 低噪音, 小型封装, 互补2SA1162. |