集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 25mA |
截止频率fT
Transtion Frequency(fT) | 2.5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 20~150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc
Power Dissipation | 280mW/0.28W |
| Description & Applications | NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
| 描述与应用 | NPN硅RF晶体管 对于宽带放大器高达1 GHz的集电极电流从1 mA到20 mA |