最大源漏极电压Vds
Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | 4A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 48mΩ@ VGS = 10V, ID = 2000mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 1.0~2.4V |
耗散功率Pd
Power Dissipation | 1W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Features • The best suited for inverter applications. • Low ON-resistance. • Composite type facilitating high-density mounting. • 4V drive. • Mounting high 0.75mm. |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备 特点 •逆变器应用最适合。 •低导通电阻。 •复合型，促进高密度安装。 •4V驱动器。 •安装高0.75毫米。 |