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  • Model：SGF9C-TL-E
  • Manufacturer：HUABAN
  • Date Code：08+ROHS
  • Standard Package：1000
  • Min Order：10
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  • Package：SOT86

最大源漏极电压Vds
Drain-Source Voltage		6V
栅源极击穿电压V(BR)GS
Gate-Source Voltage		-5V
漏极电流(Vgs=0V)IDSS
Drain Current		30mA-70mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage		-0.5V -- -5.0V
耗散功率Pd
Power Dissipation		130mW/0.13W
Description & ApplicationsN-Channel GaAs MES FET For C to X-band Local Oscillator and Amplifier Mold package-owing to the cross-mold technology this product can maintain the same performance as the ceramic package The chip surface is covered with the highly reliable protection film Automatic surface mounting is available
描述与应用N沟道砷化镓MES 场效应管 用于C X-波段本地振荡器和放大器 模具包装，交叉模具技术 由于陶瓷封装，这种产品能保持相同的性能 该芯片表面覆盖高度可靠的保护膜 自动表面安装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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