集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 140V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 110V |
集电极连续输出电流IC
Collector Current(IC) | 1.5A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 500~2000 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 1V |
耗散功率Pc
Power Dissipation | 1W |
| Description & Applications | • NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. |
| 描述与应用 | •达林顿晶体管NPN This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. |