2N7002DW-7-F Complex FET 60 115mA/0.115A SOT-363/SC70-6 marking K72 high-speed switch Dual N-Channel|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2N7002DW-7-F Complex FET 60 115mA/0.115A SOT-363/SC70-6 marking K72 high-speed switch Dual N-Channel

Inventory:11100 Min Order：10

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Model：2N7002DW-7-F
Manufacturer：HUABAN
Date Code：08NOPB 06+NOPB3200
Standard Package：3000
Min Order：10
Mark/silk print/code/type：K72
Package：SOT-363/SC70-6

最大源漏极电压Vds Drain-Source Voltage	60V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	115mA/0.115A
源漏极导通电阻Rds Drain-Source On-State Resistance	3.2Ω@ VGS = 5.0V, ID = 0.05A
开启电压Vgs（th） Gate-Source Threshold Voltage	1~2V
耗散功率Pd Power Dissipation	200mW/0.2W
Description & Applications	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small-Signal-Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package
描述与应用	双N沟道增强型场效应晶体管小信号晶体管特点双N沟道MOSFET 低导通电阻低栅极阈值电压低输入电容开关速度快吗低输入/输出漏超小型表面贴装封装

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