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  • Model：AON2801L
  • Manufacturer：HUABAN
  • Date Code：09+ROHS
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：2801
  • Package：DFN 2x2

最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-3A
源漏极导通电阻Rds
Drain-Source On-State Resistance		160mΩ@ VGS = -1.8V,ID = -1.5A
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.3~-1V
耗散功率Pd
Power Dissipation		1.5W
Description & ApplicationsDual P-Channel Enhancement Mode Field Effect Transistor General Description The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical. -RoHS Compliant -AON2801L is Halogen Free
描述与应用双P沟道增强型场效应晶体管 概述 AON2801/ L，采用先进的沟槽技术，提供出色的RDS（ON），低栅极电荷和操作与栅极电压可低至1.8V。这个装置是适合用于作为负载开关或PWM应用。 AON2801和AON2801L是电动相同。 符合RoHS标准 AON2801L是无卤

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AON2801L
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