集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −600V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −600V |
集电极连续输出电流IC
Collector Current(IC) | -1A |
截止频率fT
Transtion Frequency(fT) | 30MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40~80 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率Pc
PoWer Dissipation | 2W |
| Description & Applications | PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING FEATURES • New package with dimensions in between those of small signal and power signal package • High voltage • Fast switching speed • Complementary transistor with 2SC4942 |
| 描述与应用 | PNP硅三重扩散型晶体管高速高压开关 特点 •新的封装，尺寸之间的小信号和功率信号包 •高电压 •开关速度快 •互补晶体管2SC4942 |