最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 10V |
最大漏极电流Id
Drain Current | -3A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 0.036Ω @-1A,-4V |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.4--1.3V |
耗散功率Pd
Power Dissipation | 700mW/0.7W |
| Description & Applications | Features Low voltage drive (1.8 V, 2.5 V, 4 V) Realization of low on-resistance, using extremely fine process Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package |
| 描述与应用 | 低电压驱动（1.8 V，2.5 V，4 V） 实现低导通电阻，用极其精细的过程 集小型化，减少元件数量。 环保无卤素封装 |