集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 80MHz |
直流电流增益hFE
DC Current Gain(hFE) | 210~340 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率Pc
PoWer Dissipation | 125mW/0.125W |
| Description & Applications | PNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD2216 Features 1)High foward current transfer ratio hFE. 2)Mini Power type package |
| 描述与应用 | PNP硅外延平面晶体管 对于一般的放大 补充型2SD2216 特点 1）高FOWARD的电流传输比HFE。 2）小功率型封装 |