最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -20V |
最大漏极电流Id
Drain Current | -4.5A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 53mΩ@ VGS = -4V, ID = -2.2A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -1~-2.5V |
耗散功率Pd
Power Dissipation | 1.25W |
| Description & Applications | 4V Drive Pch MOSFET Features 1) Low On-resistance. 2) High Power Package. 3) High speed switching. Application Switching |
| 描述与应用 | 4V驱动P沟道MOSFET 特点 1）低导通电阻。 2）高功率封装。 3）高速开关。 应用 开关 |