集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 200~450 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 200~600 mV |
耗散功率Pc
Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 |
| 描述与应用 | NPN硅晶体管自动对焦 •AF输入级和驱动器应用 •高电流增益 •低集电极 - 发射极饱和电压，低管压降 •低噪音之间30 Hz和15千赫 •互补类型： BC856-BC860（PNP） |