集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 6V |
集电极连续输出电流IC
Collector Current(IC) | 35mA |
截止频率fT
Transtion Frequency(fT) | 14GHz |
直流电流增益hFE
DC Current Gain(hFE) | 60~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 210mW/0.21W |
| Description & Applications | NPN Silicon RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure |
| 描述与应用 | NPN硅RF晶体管 低电压/低电流操作 对于低噪声放大器 对于振荡器高达3.5 GHz和功率输出>10 dBm的 低噪声系数 |