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  • Model：SSM6J26FE
  • Manufacturer：HUABAN
  • Date Code：12+rohs 06+ROHS
  • Standard Package：4000
  • Min Order：10
  • Mark/silk print/code/type：PI
  • Package：SOT-563/ES6

最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-0.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		980mΩ@ VGS = -1.8V, ID = -250mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.5~-1.1V
耗散功率Pd
Power Dissipation		500mW/0.5W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance:Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V)
描述与应用东芝场效应晶体管硅P沟道MOS类型（U-MOSIII） 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻:Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V)

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