集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 200mA/0.2A |
截止频率fT
Transtion Frequency(fT) | 400MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40~120 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc
Power Dissipation | 225mW/0.225W |
| Description & Applications | NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. |
| 描述与应用 | NPN开关晶体管 该设备是专为高速饱和开关 集电极电流10 mA至100 mA的。 |