集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 300MHz |
直流电流增益hFE
DC Current Gain(hFE) | 70~220 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 125mW/0.125W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •For high-frequency amplification •Optimum for RF amplification of FM/AM radios •High transition frequency fT •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 特点 •NPN硅外延平面型 •对于高频放大 •FM/ AM收音机，最适用于射频放大 •高转换频率fT •SS-迷你型包装，使瘦身的设备和通过自动插入磁带包装 |