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  • Model：SSM6P40TU
  • Manufacturer：HUABAN
  • Date Code：11+ROHS
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：PP2
  • Package：SOT-363/SC70-6/UF6

最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		0
源漏极导通电阻Rds
Drain-Source On-State Resistance		226mΩ@ VGS = -10V, ID = -1000mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.8~-2.0V
耗散功率Pd
Power Dissipation		500mW/0.5W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V)
描述与应用TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V)

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SSM6P40TU
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