| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -150mA/100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.468 |
| 直流电流增益hFE DC Current Gain(hFE) | 180~390 |
| 截止频率fT Transtion Frequency(fT) | 140MHz/250MHz |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | Features • Power management (dual transistors) • Power switching circuit in a single package. • Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •电源管理（双晶体管） •电源开关电路，在单一封装中。 •安装成本和面积可减少一半 |