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  • Model：TPCP8G01
  • Manufacturer：HUABAN
  • Date Code：09+ROHS
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：8G01
  • Package：PS-8

 

 Transistor Type  PNP

Collector-Base Voltage(VCBO)		  -30V

Collector-Emitter Voltage(VCEO)		  -20V

Collector Current(IC)		  -3.0A

Transtion Frequency(fT)		  

DC Current Gain(hFE)		  200~500
VCE（sat）
Collector-Emitter Saturation Voltage		  -0.19V
 MOSFET TYPF  P Channel MOS
Vds
Drain-Source Voltage		  -20V
Vgs(±)
Gate-Source Voltage		  ±8V

Drain Current(ID)		  -2.0A
Rds(on)
FET Drain-Source On-State Resistance		  ID = −1.0 A, VGS = −4 V RDS=90~130mΩ
ID = −0.5 A, VGS = −2.5 V RDS=124~186mΩ
ID = −0.2 A, VGS = −1.8V RDS=180~320mΩ
Vgs（th）
Gate-Source Threshold Voltage		   -0.3~1.0V

Power Dissipation(PD_		  0.94W

Description & Applications
 Transistor Silicon PNP Epitaxial Type／Field Effect Transistor Silicon P Channel MOS Type 
○ Switching Applications 
 • Multi-chip discrete device: PNP Transistor and Ｐ Channel MOS FET 
• Small footprint due to small and thin package 
 

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TPCP8G01
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